EC6701-RF and Microwave EngineeringWrite the frequency range for following IEEE microwave bands.
(i) L band (ii) S band (iii) C band (iv) X bandWhat is the need for S-parameters?
Draw the equivalent circuit of a practical capacitor and inductor.
Give the relation between S and ABCD parameters.
List the properties of S- parameters.
Write the equation for VSWR at port 1 in terms of S 11.
Describe Reflection Co-efficient at the input side and output side of a two-port network in terms of S-parameters.
A 5dB attenuator is specified as having VSWR of 1.2. Assuming the device is reciprocal, find the S-parameters.
Draw the electric equivalent circuit for a high frequency inductor.
Discuss the advantages of scattering parameters.
Demonstrate reciprocal and symmetrical networks.
Mention the limitations in measuring Z, Y and ABCD parameter at microwave frequencies.
Show the principal advantage of microwave frequencies over lower frequency
Examine the features of lossless network.
What are the reasons that low frequency parameters cannot be measured in microwaves?
Analyze transmission loss in terms of S-parameters.
How would you explain return loss of a two-port network?
Assess the importance of reflection loss in microwave network.
Discuss four applications of RF circuit.
Explain the transmission matrix and its advantages.
(i)Describe the properties and applications of RF waves.
(ii)Examine in detail about low frequency parameters. (i)Show Z and Y matrix formulation of multiport network.
(ii)List the limitations of ABCD,Z,Y and h parameters(i)Define ABCD matrix of a two port network and obtain ABCD matrix for series impedance and shunt admittance.
(ii)Compute ABCD matrix for a T network and Pi network. Draw the High Frequency equivalent of wire, resistors, inductors & capacitors and Explain.
(i) How microwave junction can be described by scattering matrix? Derive the scattering matrix relation between the input and output of n*n port junction.
(ii) Write the expression of losses in terms of S parameters.(i)Interpret S Matrix for N port network.
(ii)State and verify the symmetry property of the reciprocal networks.Discuss and explain the zero, unitary and phase shift property of S parameters.
(i)Formulate the S parameter of a two port network with mismatched load.
(ii)Explain the scattering matrix for lossless junction. Demonstrate transmission matrix for a cascade connection of two port networks? Explain them and obtain the relationship with S Matrix.
A series reactance Z=jX is connected between two lines with different characteristic impedances Z 1 and Z 2 . Infer the S-matrix of the junction.
A shunt impedance Z is connected across a transmission line with caracteristic impedance Z 0 . Find the S matrix of the junction.
Formulate the overall network parameters for cascade connection of two port network. Discuss about short circuit, open circuit, h and ABCD low frequency parameters.
Two transmission lines of characteristic impedance Z 1 and Z 2 are joined at plane PP. Assess the S parameters in terms of impedances when each line is matched terminated.
 Explain about RF behavior of passive components and design electric equivalent circuit of the following at high frequency.
(i) A wire wound resistor (ii) A capacitor (iii) An inductorExplain unilateral power gain and Noise Figure.
Describe power gain of amplifier in terms of S-parameters and reflection coefficient.
Define forward current gain and reverse voltage gain.
Infer on feedback of RF circuit.
Analyze the parameters used to evaluate the performance of an amplifier.
Formulate the need for transducer power gain.
Name two noise parameters.
Write the expression for noise figure of a two port amplifier.
Summarize the basic steps in the design process of RF amplifier circuits.
What are the components required for impedance matching at low, mid and high frequencies?
Show the purpose of a matching network and smith chart.
Draw any two matching networks used in microwave frequencies.
 List the considerations in selecting the matching network.
Discuss the four adjustable parameters for matching networks.
Show the difference between conditional and unconditional stabilities of amplifier
Examine why impedance matching is required. What are the other constrains required.
List the main drawback of a single stub matching network.
Write the function of matching networks
Estimate the expression for nodal quality factor with loaded quality factor.
Formulate the need for Rollett factor. Write its expression.
Describe the characteristics of amplifier and Derive transducer power gain, unilateral power gain, available power gain and operating power gain of a microwave amplifier using S parameters.
Define the term negative feedback and find h and S parameter representation for negative feedback broadband amplifier.
Examine the expression for input stability circle equation and output stability equation.
(i)List and explain stabilization Methods with configuration at input and output port.
(ii)Explain unilateral design for gain in detail and derive the frequency dependent unilateral figure of merit equation.Explain unconditional stability and the tests to conclude the same.
(i)Illustrate about the general noise figure and NF circles.
A MESFET operated at 5.7GHz ha the following S parameters: S11=0.5?-60°, S12=0.02?0°, S21=6.5?115° and S22=0.6?-35°. Determine if the circuit is unconditionally stable and Find the maximum power gain under optimal choice of reflection coefficients, assumi
The S-parameters for a transistor is given below. Determine its stability and draw the input and output stability circles, use smith chart. S11=0.385?-53°, S12=0.045?90°, S12=2.7?78° and S22=0.89?-26.5°.
Demonstrate on microstripline matching networks with necessary diagrams.
(i)Write notes on matching network? Why is this required?
(ii)Design a lumped element ‘LC’ network for matching ZL=10+j10O to a 50O transmission line at 1 GHz.Discuss about the design of T section and Pi section matching Networks.
Examine single stub and double stub matching network and Explain in detail.
Evaluate the smith chart approach to design the L-section and T-section matching Networks.
Draw the 8dB gain circle of the transistor with the following S parameters at 1GHz. S11=0.46?-97°, S12=0.06?-22°, S21=7.1?112° and S22= 0.57 ?-48°.
An RF amplifier has the following S parameters: S 11 =0.3?-70°, S 21 =3.5?85°, S 12 =0.2?-10°, S 22 =0.4?-45°. Further Vs=5V?0°, Zs=40? and Z L =73?. Assuming Zo=50?. Find G T , G TU , G A and G. Also find Power delivered to the load P L , avail
Develop a balanced broadband amplifier and discuss the theory behind the operation of couplers and power dividers with neat diagrams.
Design LC network to match source impedance Zs=50+j25O to the load ZL =25-j50O.Assume Zo=50?; f=2GHz. Use smith chart.
Generalize the procedure for designing a two component matching networks and also explain about forbidden regions, frequency response and quality factor.
Outline the features of ferrites and write its properties. Give some examples of ferrite devices.
Identify the use of matched termination in microwave communication setup.
Draw the equivalent circuit of a Gunn diode.
Write the S matrix for 4 port circulator.
What are waveguide corners, bends and twists?
List the basic parameters to measure the performance of a Directional Coupler?
Summarize sum and difference arm of Magic Tee.
Discuss about gyrator and phase shifter.
Illustrate islolator. And why islolators are called Unline?
Review the principle of Faraday’s rotation.
Demonstrate Gunn diode and list the modes.
Exhibit the negative resistance property in Gunn diode.
Interpret about the step recovery diode.
Examine the factors reducing the efficiency of IMPATT diode.
Categorize the applications of magic-Tee.
Compare PIN and PN diode.
Assess the terms IMPATT, TRAPATT and BARITT.
Determine the substrate materials used in MMICs.
Formulate the applications based of TRAPATT diode.
Organize the various types of strip lines used in MMIC.
With neat diagram explain the operation of attenuator and phase shifter in detail.
Show the operation and properties of E-plane Tee and H-plane Tee. Derive their S parameters.
(i)Find scattering matrix for Hybrid Tee/Magic Tee using S parameter theory.
(ii)List and explain the applications of magic Tee.(i)Write notes on Hybrid ring/Rat race junction. With the help of a neat diagram explain its working principle.
(ii)Show with neat diagram waveguide terminations, corners, twists and bends. (i)From the first principles derive the Scattering matrix of a multi hole Directional Coupler.
(ii)Infer the characteristics of directional coupler in terms of S parameters and explain in detail two hole directional coupler.Demonstrate the principle of microwave transmission through ferrite and explain how a Gyrator and isolator is designed based on this effect.
(i)Explain principle of operation of 3 port circulator with S parameter.
(ii)Construct four Port circulator using Magic Tee and also by using Directional Coupler.With neat diagrams, explain the operation of Tunnel diode and its application as an oscillator and amplifier.
(i)How would you explain varactor diode and its application as frequency multiplier?
(ii) In detail explain step recovery diode.(i)Examine crystal diode, schottky diode, diode detector and diode mixer circuit.
(ii)Explain in detail PIN diode and its applications. Discuss the working principle of Gunn diode as a transferred electron device with two valley model, Also draw the structure, equivalent circuit and V-I characteristics of Gunn diode.
(i)A 20 mW signal is fed into one of collinear port 1 of a lossless Hplane T-junction. Analyze the power delivered through each port when other ports are terminated in matched load.
(ii)In a H-plane T-junction, examine power delivered to the loads 40 ohm and 60 ohm connected to arms 1 and 2 when 10 mW power is delivered to matched port 3. (i)What are avalanche transit time devices? Explain the operation and construction of IMPATT diode.
(ii)Explain mechanism of oscillation of IMPATT and as power amplifier.Discuss the following :
(i) Quarter wave transformer (ii) Gunn diode oscillator Can you explain the materials used for MMIC fabrication? Also explain with neat diagrams the fabrication process of MMICs
What is Circulator? With neat diagram, explain the working principle, construction, operation of four port circulator using magic-tee. Verify the circulator theory with necessary S-parameter equations.
With neat diagram, discuss the characteristics of series Tee and shunt Tee and derive the S matrix.
Interpret the principle of operation of any two non-reciprocal devices and derive the S parameters.
What is Tetrodes and Pentodes?
State the transferred electron effect.
Write about the classification of microwave tubes and explain the difference between them.
Define density modulation?
Quote the difference between TWTA and Klystron Amplifier.
List the advantages of Parametric amplifier
Illustrate the phase focusing effect.
Summarize the condition for oscillation and applications in Reflex Klystron?
Discuss any four high frequency limitations.
Demonstrate frequency pulling and frequency pushing in magnetrons?
Interpret the effect of transit time.
Exhibit the purpose of slow wave structures in TWT.
Distinguish between O-type and M-type tubes.
Explain Hull cutoff condition?
Examine the velocity modulation in microwave component.
Determine the characteristics of Co-axial magnetron.
Why magnetron is called as Cross field Devices?
How would you explain BWO? State the applications of BWO.
Devise the Bunching process.
Demonstrate frequency pulling and frequency pushing in magnetrons.
(i)Write notes on high frequency limitations of conventional vacuum devices.
(ii)What are the characteristics of travelling wave tube. (i)With the Applegate diagram, Describe the mechanism of operation of two cavity klystron Amplifier.
(ii)Derive the equation of velocity modulation and transit time in drift space.(i)Define bunching process and obtain optimum bunching distance Lopt.
(ii)Obtain output power, efficiency, mutual conductance and voltage gain of klystron amplifier. An identical two cavity Klystron amplifiers operates at 4GHz with V0 =1 kV, I o=22mA, cavity gap 1mm, drift space 3 cms. Calculate beam coupling cofficient, d.c. transit angle in drift space and input cavity voltage magnitude for maximum output voltage.
(i)Discuss the working principle of reflex klystron oscillator with necessary diagrams.
(ii)Derive velocity modulation, transit time of reflex klystron oscillator.(i)Summarize the power output mode curve/frequency characteristics of reflex klystron.
(ii)Draw the equivalent circuit and Obtain the electronic spiral curve of reflex klystron. A reflex klystron is operated at 9 GHz with dc beam voltage 600V, beam current 10mA, repeller space length of 1mm for 1 ¾ mode, Beam coupling coefficient is assumed to be 1. Calculate the repeller voltage, RF power output, electronic efficiency and the ba
Illustrate with interaction region diagram the mechanism of operation of TWT amplifier, its applications and the expression for the gain of a TWT.
(i) Demonstrate the role of slow wave structure in TWT and give the comparison between two cavity Klystron amplifiers with travelling wave tube.
(ii)A helical TWT has diameter of 2mm with 50 turns per cm. Calculate the axial phase velocity and anode voltage at which TWT can be operated for useful gain.A helix TWT operates at 4GHz under a beam voltage 10KV and beam current 500mA. If the helix impedance is 25 ? and the interaction length of 20cm, Find the O/P power gain in dB.
Examine the construction, operation, characteristics and applications of BWO.
Analyze the Gain Characteristics of Travelling Wave Tube Amplifier.
A pulsed cylindrical magnetron is operated with the following parameters: Anode voltage = 25 kV Beam current = 25 A Magnetic density = 0.34 Wb/m 2 Radius of cathode cylinder = 5 cm Radius of anode cylinder = 10 cm Calculate :
a) The angular frequency, (4) b) The cut off voltage, (4) c) The cut off magnetic flux density. (5) (i) Generalize the different types of magnetron oscillators.
(ii) An X band pulsed cylindrical magnetron has Anode voltage V0 =25KV, Beam current I0 =25A, Magnetic flux density B0=0.34wb/m2 , radius of cathode cylinder a=5cm and radius of vane edge to center b=10cm. Determine cyclotron angular frequency, cutoff voAssess the working principle and operation of multi-cavity Klystron amplifier and derive the expression for its output power.
How would you describe the p mode of oscillations of Magnetron, what is meant by strapping in magnetron and why it is done?
Develop the cross sectional view of magnetron tube and explain how bunching occurs with equations of electron trajectory and derive the expression for Hull cut-off voltage
A two cavity Klystron amplifier has the following specifications : Beam Voltage , Vo = 900V Beam Current, Io = 30mA Frequency f = 8 GHz Gap spacing in either cavity , d = 1 mm Spacing between center of cavities , L = 4 cm Effective shunt impedance, Rsh =
(i) Electron velocity (ii) dc transit time of electron (iii) Maximum input voltage (iv) Voltage gain Quote the difference between Scalar and Vector network analyzers.
What is the significance behind dielectric constant measurement?
List any two methods of measuring microwave power.
Name two sensors used for microwave power measurement.
List the main errors in the measurement of attenuation at microwave frequency.
Show the significance of VSWR measurement.
Summarize the basic design considerations for the proper operation of a spectrum Analyzer?
Describe the three scales on the VSWR meter.
Interpret the methods used for frequency measurement
Differentiate barretter and thermistor.
Explain guide wavelength
Show how the S-parameter of a microwave circuit measured?
Demonstrate the errors possible in VSWR measurements.
Classify microwave power with its range.
Analyze the methods employed to measure cavity Q?
Infer some application of spectrum analyzer.
Determine the uses of network analyzer. What are the types of network analyser?
How will you determine the VSWR from reflection coffecient?
Discuss the different types of Impedance measurement methods?
Can you elaborate the main purpose of slotted section with line carriage?
Summarize about Spectrum analyzer and Network analyzer with suitable diagrams.
Write notes on power sensors used for microwave power measurements.
(i)Show the principle of power meter bridge circuit.
(ii)Identify how high power measurements are done using calorimetric method. What are the steps involved for the insertion loss and power ratio method of attenuation measurement. Explain in detail.
With the experimental setup, describe return loss measurement by reflectometer method.
Summarize the slotted line method of VSWR measurement to measure low values of VSWR.
Describe the measurement of high VSWR by double minima method with the help of block diagram.
(i)Illustrate the procedure to measure the impedance of a Load using slotted line method.
(ii) Examine the measurement of impedance of a discontinuity and measurement of impedance by reflectometer. Classify and explain the three ways of frequency measurement techniques?
Explain the impedance, wavelength and frequency measurement using slotted line method.
Analyze about cavity Q. Also explain slotted line method and reflectometer method of measurement of Q.
Infer in detail the measurement of Q from transmitted power measurement.
How would you determine dielectric constant, explain with block diagram.
(i) Formulate a method for the calculation of S parameter of a two port network.
(ii)How would you calculate the S parameter of a four port network- say for a magic Tee.(i) The signal power at the input of a device is 10 mW. The signal power at the output of the same device is 0.20 mW. Calculate the insertion loss in dB of this Component
(ii) Calculate the VSWR in dB in a waveguide when the load is a 3 dB attenuator terminated by a short circuitA coaxial slotted line is used to measure VSWR of the load at 2 GHz by double minima method. If the distance between the positions of twice minimum power is 0.5 cm, estimate the value VSWR on the line and the magnitude of the voltage reflection coefficien
(i) A waveguide with a load is matched by a tuning screw located at position 1. What impedance will be presented by the waveguide to the generator if the screw is moved by half wavelength towards the load from position 1.
(ii) The reflection coefficient of a load is 0.5?-30? calculate the normalized admittance of the load.In attenuation measurement of a matched attenuator the microwave source is modulated by 1kHz square wave. The VSWR is peaked to 0 dB with the 30 dB range without attenuator in the circuit. When the attenuator is inserted, the VSWR meter reads the value of

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